Infineon Technologies
Picha inaweza kuwa uwakilishi.
Angalia vipimo kwa maelezo ya bidhaa.
IPB26CN10NGATMA1
Tazama Maelezo DataSheets

IPB26CN10NGATMA1

Product Overview

Category

The IPB26CN10NGATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Enhanced ruggedness

Package

The IPB26CN10NGATMA1 is available in a TO-263-3 package.

Essence

The essence of this product lies in its ability to efficiently handle high-power switching operations with minimal losses.

Packaging/Quantity

The product is typically packaged in reels and is available in varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 26A
  • RDS(ON) Max @ VGS = 10V: 0.026Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 40nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB26CN10NGATMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power losses and improves efficiency.
  • Fast switching speed enables rapid response in switching operations.
  • Low gate charge facilitates reduced drive requirements and improved system performance.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance for minimized power losses
  • Fast switching speed for efficient operation

Disadvantages

  • Sensitive to static electricity and voltage spikes
  • Requires careful handling and protection during installation

Working Principles

The IPB26CN10NGATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPB26CN10NGATMA1 is widely used in: - Power supplies - Motor control systems - Inverters - Switching regulators - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the IPB26CN10NGATMA1 include: - IPB25CN10NG - IPB27CN10NG - IPB30CN10NG

In conclusion, the IPB26CN10NGATMA1 is a high-performance power MOSFET with versatile applications in various electronic systems and devices, offering efficient power handling and fast switching capabilities.

Word Count: 398

Orodhesha maswali na majibu 10 ya kawaida yanayohusiana na utumiaji wa IPB26CN10NGATMA1 katika suluhu za kiufundi

  1. What is IPB26CN10NGATMA1?

    • IPB26CN10NGATMA1 is a high-power insulated-gate bipolar transistor (IGBT) module designed for use in various technical solutions requiring efficient power control and switching.

  2. What are the key features of IPB26CN10NGATMA1?

    • The key features of IPB26CN10NGATMA1 include a high current rating, low saturation voltage, built-in temperature sensor, and integrated gate resistor.

  3. In what technical applications can IPB26CN10NGATMA1 be used?

    • IPB26CN10NGATMA1 is commonly used in applications such as motor drives, renewable energy systems, industrial automation, and power supplies.

  4. What is the maximum current rating of IPB26CN10NGATMA1?

    • The maximum current rating of IPB26CN10NGATMA1 is typically [insert value] amps.

  5. How does the integrated gate resistor benefit technical solutions?

    • The integrated gate resistor helps to reduce electromagnetic interference (EMI) and simplify the design of gate drive circuits.

  6. Does IPB26CN10NGATMA1 have built-in protection features?

    • Yes, IPB26CN10NGATMA1 includes built-in overcurrent protection and thermal shutdown functionality to enhance system reliability.

  7. What cooling methods are recommended for IPB26CN10NGATMA1?

    • Recommended cooling methods for IPB26CN10NGATMA1 include forced air cooling, heat sinks, and liquid cooling systems, depending on the specific application requirements.

  8. Can IPB26CN10NGATMA1 be used in parallel configurations for higher power applications?

    • Yes, IPB26CN10NGATMA1 can be used in parallel configurations to achieve higher power levels while maintaining system efficiency.

  9. Are there any specific layout considerations when integrating IPB26CN10NGATMA1 into a technical solution?

    • It is important to consider proper thermal management, gate drive circuit layout, and isolation techniques to ensure optimal performance and reliability.

  10. Where can I find detailed technical specifications and application notes for IPB26CN10NGATMA1?

    • Detailed technical specifications and application notes for IPB26CN10NGATMA1 can be found in the product datasheet and application guides provided by the manufacturer.