IS42S16100F-6BLI

Product Overview

Category

IS42S16100F-6BLI belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used as a main memory component in various electronic devices such as computers, laptops, servers, and embedded systems.

Characteristics

• High-speed operation: The IS42S16100F-6BLI offers fast data access and transfer rates, making it suitable for applications that require quick and efficient memory operations.
• Large storage capacity: With a capacity of 16 megabits (2 megabytes), this DRAM module provides ample space for storing data and instructions.
• Low power consumption: The module is designed to consume minimal power, ensuring energy efficiency in electronic devices.
• Compact package: The IS42S16100F-6BLI comes in a small form factor package, allowing for easy integration into various circuit boards and systems.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Packaging/Quantity

The IS42S16100F-6BLI is typically packaged in trays or reels, containing a specific quantity of modules per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 1M words x 16 bits
• Supply Voltage: 3.3V
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: 54-ball FBGA (Fine-Pitch Ball Grid Array)

Detailed Pin Configuration

The IS42S16100F-6BLI module has a total of 54 pins, each serving a specific function. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. /CKE
41. /BA0
42. /BA1
43. /A16
44. /A17
45. /A18
46. VCC
47. VCC
48. VCC
49. VCC
50. VCC
51. VCC
52. VCC
53. VCC
54. VCC

Functional Features

• High-speed data access: The IS42S16100F-6BLI offers fast read and write operations, enabling efficient data transfer between the memory module and the processor.
• Burst mode support: This module supports burst mode, allowing for consecutive data transfers without the need for individual address commands.
• Auto-refresh capability: The IS42S16100F-6BLI automatically refreshes the stored data at regular intervals, ensuring data integrity and reliability.
• Self-timed write cycle: The module incorporates a self-timed write cycle, simplifying the memory write process for the user.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access and transfer.
• Large storage capacity provides ample space for storing data and instructions.
• Low power consumption ensures energy efficiency in electronic devices.
• Compact package allows for easy integration into various circuit boards and systems.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Limited compatibility with certain older systems that do not support SDRAM technology.
• Relatively higher cost compared to other memory technologies such as NAND flash.

Working Principles

The IS42S16100F-6BLI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the processor. When a read or write command is issued, the module accesses the requested data from its internal memory cells and transfers it to/from the processor via the data bus.

Detailed