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IS61LV12816L-10LQI-TR

IS61LV12816L-10LQI-TR

Product Overview

Category

IS61LV12816L-10LQI-TR belongs to the category of integrated circuits (ICs) and specifically falls under the category of static random-access memory (SRAM) chips.

Use

This product is primarily used for storing digital data in electronic devices. It provides high-speed read and write operations, making it suitable for applications that require fast access to data.

Characteristics

  • High-speed operation
  • Low power consumption
  • Non-volatile storage
  • Compact size
  • Reliable performance

Package

IS61LV12816L-10LQI-TR is available in a small outline integrated circuit (SOIC) package. This package type ensures easy integration into various electronic devices.

Essence

The essence of IS61LV12816L-10LQI-TR lies in its ability to provide reliable and efficient data storage with high-speed access.

Packaging/Quantity

IS61LV12816L-10LQI-TR is typically packaged in reels or tubes, depending on the manufacturer's specifications. The quantity per package varies but is usually in the range of hundreds to thousands of units.

Specifications

  • Part Number: IS61LV12816L-10LQI-TR
  • Memory Type: Static Random-Access Memory (SRAM)
  • Organization: 128K words x 16 bits
  • Access Time: 10 ns
  • Supply Voltage: 3.3V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: SOIC
  • Pin Count: 48

Detailed Pin Configuration

The pin configuration of IS61LV12816L-10LQI-TR is as follows:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. VCC
  18. OE#
  19. WE#
  20. I/O0
  21. I/O1
  22. I/O2
  23. I/O3
  24. I/O4
  25. I/O5
  26. I/O6
  27. I/O7
  28. I/O8
  29. I/O9
  30. I/O10
  31. I/O11
  32. I/O12
  33. I/O13
  34. I/O14
  35. I/O15
  36. GND
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed access: The IS61LV12816L-10LQI-TR offers fast read and write operations, enabling quick data retrieval and storage.
  • Low power consumption: This SRAM chip is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Non-volatile storage: The stored data remains intact even when the power supply is disconnected.
  • Compact size: The small form factor of the chip allows for easy integration into space-constrained electronic devices.
  • Reliable performance: IS61LV12816L-10LQI-TR delivers consistent and reliable performance over extended periods of use.

Advantages and Disadvantages

Advantages

  • High-speed operation enables efficient data access.
  • Low power consumption prolongs battery life in portable devices.
  • Non-volatile storage ensures data integrity during power interruptions.
  • Compact size allows for easy integration into various electronic devices.
  • Reliable performance guarantees consistent operation.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Relatively higher cost per unit compared to some alternative memory solutions.
  • Susceptible to electromagnetic interference (EMI) due to its integrated circuit nature.

Working Principles

IS61LV12816L-10LQI-TR operates based on the principles of static random-access memory. It uses flip-flops to store each bit of data, which can be accessed and modified through specific address lines. The chip utilizes a combination of transistors and capacitors to retain the stored data even when the power supply is disconnected.

Detailed Application Field Plans

IS61LV12816L-10LQI-TR finds applications in various electronic devices that require high-speed data storage and retrieval. Some common application fields include:

  1. Computer systems: Used as cache memory or for storing critical system data.
  2. Networking equipment: Enables fast data buffering and packet processing. 3

Orodhesha maswali na majibu 10 ya kawaida yanayohusiana na utumiaji wa IS61LV12816L-10LQI-TR katika suluhu za kiufundi

  1. Question: What is the maximum operating frequency of the IS61LV12816L-10LQI-TR?
    Answer: The maximum operating frequency of the IS61LV12816L-10LQI-TR is 10 MHz.

  2. Question: What is the voltage supply range for this memory chip?
    Answer: The voltage supply range for the IS61LV12816L-10LQI-TR is 2.7V to 3.6V.

  3. Question: How much memory does the IS61LV12816L-10LQI-TR have?
    Answer: The IS61LV12816L-10LQI-TR has a total memory capacity of 2 megabits (128K x 16).

  4. Question: Can this memory chip be used in battery-powered devices?
    Answer: Yes, the IS61LV12816L-10LQI-TR can be used in battery-powered devices as it operates within a low voltage range.

  5. Question: Does this memory chip support random access?
    Answer: Yes, the IS61LV12816L-10LQI-TR supports random access, allowing for efficient read and write operations.

  6. Question: What is the access time of this memory chip?
    Answer: The access time of the IS61LV12816L-10LQI-TR is 10 ns, ensuring fast data retrieval.

  7. Question: Is this memory chip compatible with standard microcontrollers?
    Answer: Yes, the IS61LV12816L-10LQI-TR is compatible with standard microcontrollers that support the appropriate interface (e.g., parallel or asynchronous).

  8. Question: Can I use multiple IS61LV12816L-10LQI-TR chips in parallel to increase memory capacity?
    Answer: Yes, multiple IS61LV12816L-10LQI-TR chips can be used in parallel to increase the overall memory capacity of the system.

  9. Question: Does this memory chip have any built-in error correction capabilities?
    Answer: No, the IS61LV12816L-10LQI-TR does not have built-in error correction capabilities. External error correction techniques may need to be implemented if required.

  10. Question: What is the package type for the IS61LV12816L-10LQI-TR?
    Answer: The IS61LV12816L-10LQI-TR comes in a 48-pin LQFP (Low Profile Quad Flat Package) package.