IS62WV51216BLL-55BI

Product Overview

Category

IS62WV51216BLL-55BI belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage device in electronic systems, providing non-volatile memory capabilities.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: 512 megabits (64 megabytes) of storage.
• Low power consumption: Operates at low voltage levels, conserving energy.
• Fast access time: Provides quick retrieval of stored data.
• Wide temperature range: Can operate reliably in extreme temperature conditions.

Package

IS62WV51216BLL-55BI is available in a Ball Grid Array (BGA) package.

Essence

The essence of IS62WV51216BLL-55BI lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

Each package of IS62WV51216BLL-55BI contains a single unit of the memory chip.

Specifications

• Memory Type: Asynchronous SRAM
• Organization: 512Mbit x 16bit
• Operating Voltage: 3.0V - 3.6V
• Access Time: 55ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA

Detailed Pin Configuration

The IS62WV51216BLL-55BI chip has the following pin configuration:

1. VCC
2. A0-A18
3. DQ0-DQ15
4. WE#
5. OE#
6. CE#
7. UB#
8. LB#
9. BYTE#
10. R/B#
11. NC
12. GND

(Note: The above list represents only a subset of the total pins available on the chip.)

Functional Features

• Asynchronous operation: The memory chip does not require a clock signal for data access.
• Byte control: Allows individual byte-level read and write operations.
• Write protection: Provides mechanisms to protect stored data from accidental modification.
• Power-saving modes: Supports various power-saving modes to reduce energy consumption when not in use.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Wide temperature range operation
• Byte-level control for efficient data manipulation

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to non-volatile memory types

Working Principles

IS62WV51216BLL-55BI operates based on the principles of static random-access memory (SRAM). It stores data using flip-flop circuits, which retain their state as long as power is supplied. The chip uses address lines to select specific memory locations and data lines for reading from or writing to those locations.

Detailed Application Field Plans

IS62WV51216BLL-55BI finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Industrial automation - Automotive electronics - Medical devices

Alternative Models

Below are some alternative models that offer similar functionality to IS62WV51216BLL-55BI:

1. MT45W8MW16BGX-701 WT
2. AS6C4008-55BIN
3. CY62157EV30LL-45ZSXI
4. K6R4016V1D-UI10

(Note: The above list represents only a few examples of alternative models available in the market.)

In conclusion, IS62WV51216BLL-55BI is a high-capacity, non-volatile memory chip that offers fast access times and low power consumption. It finds applications in various electronic systems and provides byte-level control for efficient data manipulation. While it may have a higher cost compared to other memory technologies, its advantages outweigh the disadvantages for many applications.