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IS64WV51216EDBLL-10BLA3-TR

IS64WV51216EDBLL-10BLA3-TR

Product Overview

Category

IS64WV51216EDBLL-10BLA3-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

  • High-speed operation: The IS64WV51216EDBLL-10BLA3-TR offers fast read and write speeds, enabling efficient data processing.
  • Large storage capacity: With a capacity of 512 megabits (64 megabytes), this memory chip can store a significant amount of data.
  • Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: The IS64WV51216EDBLL-10BLA3-TR comes in a small form factor package, allowing for space-efficient integration into electronic devices.
  • Reliable performance: This memory chip is known for its durability and stable operation, ensuring data integrity.

Packaging/Quantity

The IS64WV51216EDBLL-10BLA3-TR is typically packaged in tape and reel format. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

  • Part Number: IS64WV51216EDBLL-10BLA3-TR
  • Memory Type: Synchronous DRAM (SDRAM)
  • Organization: 512 Megabits x 16 bits
  • Operating Voltage: 2.5V - 3.3V
  • Speed Grade: 10ns (nanoseconds)
  • Package Type: BGA (Ball Grid Array)
  • Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS64WV51216EDBLL-10BLA3-TR has a total of 66 pins. The pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. NC (No Connection)
  19. A0
  20. A1
  21. A2
  22. A3
  23. A4
  24. A5
  25. A6
  26. A7
  27. A8
  28. A9
  29. A10
  30. A11
  31. A12
  32. A13
  33. A14
  34. A15
  35. /CAS (Column Address Strobe)
  36. /RAS (Row Address Strobe)
  37. /WE (Write Enable)
  38. /OE (Output Enable)
  39. /UB (Upper Byte)
  40. /LB (Lower Byte)
  41. /CKE (Clock Enable)
  42. /CS (Chip Select)
  43. /DQM0 (Data Mask 0)
  44. /DQM1 (Data Mask 1)
  45. /DQM2 (Data Mask 2)
  46. /DQM3 (Data Mask 3)
  47. VSS
  48. VSS
  49. VSS
  50. VSS
  51. VSS
  52. VSS
  53. VSS
  54. VSS
  55. VSS
  56. VSS
  57. VSS
  58. VSS
  59. VSS
  60. VSS
  61. VSS
  62. VSS
  63. VSS
  64. VSS
  65. VSS
  66. VDDQ

Functional Features

The IS64WV51216EDBLL-10BLA3-TR offers the following functional features:

  • Random Access: The memory chip allows for random access to any location within its storage capacity, enabling efficient data retrieval.
  • Burst Mode: It supports burst mode operation, allowing for consecutive data transfers without the need for repeated address input.
  • Auto Refresh: The product automatically performs periodic refresh operations to maintain data integrity.
  • Low Power Standby: In standby mode, the chip consumes minimal power, conserving energy in battery-powered devices.

Advantages and Disadvantages

Advantages

  • High-speed operation enables fast data processing.
  • Large storage capacity accommodates a significant amount of data.
  • Low power consumption prolongs battery life in portable devices.
  • Compact package facilitates space-efficient integration.
  • Reliable performance ensures data integrity.

Disadvantages

  • Limited compatibility with certain older systems that

Orodhesha maswali na majibu 10 ya kawaida yanayohusiana na utumiaji wa IS64WV51216EDBLL-10BLA3-TR katika suluhu za kiufundi

Sure! Here are 10 common questions and answers related to the application of IS64WV51216EDBLL-10BLA3-TR in technical solutions:

  1. Q: What is IS64WV51216EDBLL-10BLA3-TR? A: IS64WV51216EDBLL-10BLA3-TR is a specific model of synchronous static random-access memory (SRAM) chip.

  2. Q: What is the capacity of IS64WV51216EDBLL-10BLA3-TR? A: The IS64WV51216EDBLL-10BLA3-TR has a capacity of 512 megabits or 64 megabytes.

  3. Q: What is the operating voltage range for IS64WV51216EDBLL-10BLA3-TR? A: The operating voltage range for IS64WV51216EDBLL-10BLA3-TR is typically between 2.7V and 3.6V.

  4. Q: What is the speed rating of IS64WV51216EDBLL-10BLA3-TR? A: The speed rating of IS64WV51216EDBLL-10BLA3-TR is 10 nanoseconds (ns).

  5. Q: What is the package type of IS64WV51216EDBLL-10BLA3-TR? A: IS64WV51216EDBLL-10BLA3-TR comes in a Ball Grid Array (BGA) package.

  6. Q: What are some typical applications of IS64WV51216EDBLL-10BLA3-TR? A: IS64WV51216EDBLL-10BLA3-TR is commonly used in networking equipment, telecommunications devices, industrial automation, and other embedded systems.

  7. Q: Can IS64WV51216EDBLL-10BLA3-TR be used in battery-powered devices? A: Yes, IS64WV51216EDBLL-10BLA3-TR can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  8. Q: Does IS64WV51216EDBLL-10BLA3-TR support multiple read and write operations simultaneously? A: Yes, IS64WV51216EDBLL-10BLA3-TR supports simultaneous read and write operations, making it suitable for high-performance applications.

  9. Q: Is IS64WV51216EDBLL-10BLA3-TR compatible with standard memory interfaces? A: Yes, IS64WV51216EDBLL-10BLA3-TR is designed to be compatible with industry-standard memory interfaces like SDRAM and DDR.

  10. Q: Where can I find more detailed technical specifications and documentation for IS64WV51216EDBLL-10BLA3-TR? A: You can refer to the datasheet provided by the manufacturer or visit their official website for detailed technical specifications and documentation on IS64WV51216EDBLL-10BLA3-TR.