AT25080B-SSHL-T

Product Overview

Category

AT25080B-SSHL-T belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is primarily used for non-volatile storage of data in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile memory: The AT25080B-SSHL-T retains stored data even when power is removed.
• High storage capacity: This chip has a storage capacity of 8 kilobits (1 kilobyte).
• Serial interface: It utilizes a serial communication protocol for data transfer.
• Low power consumption: The AT25080B-SSHL-T operates at low power levels, making it suitable for battery-powered devices.
• High reliability: It offers robust data retention and endurance characteristics.

Package

The AT25080B-SSHL-T is available in a small surface-mount package, which ensures easy integration into electronic circuit boards.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for critical data in electronic systems.

Packaging/Quantity

The AT25080B-SSHL-T is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Capacity: 8 kilobits (1 kilobyte)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The AT25080B-SSHL-T has a total of 8 pins, each serving a specific purpose:

1. Chip Select (/CS): Used to enable or disable the chip for communication.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Used to input data into the chip.
4. Serial Data Output (SO): Outputs data from the chip during read operations.
5. Write Protect (/WP): When pulled low, it protects the memory from being written.
6. VCC: Power supply voltage input.
7. Ground (GND): Common ground reference.
8. Hold (/HOLD): Allows pausing and resuming of serial communication.

Functional Features

• Byte and Page Write Operations: The AT25080B-SSHL-T supports both byte-level and page-level write operations, providing flexibility in data storage.
• Sequential Read: It allows sequential reading of data, enabling efficient retrieval of stored information.
• Software Protection: The chip offers software protection features to prevent unauthorized access or modification of stored data.
• Self-Timed Programming Cycle: The programming cycle is self-timed, simplifying the integration process.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High reliability and endurance characteristics.
• Small package size for easy integration.
• Low power consumption.
• Flexible write and read operations.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively slower write and erase operations compared to volatile memory.

Working Principles

The AT25080B-SSHL-T utilizes EEPROM technology, which allows data to be electrically programmed and erased. It stores data in a grid of memory cells, with each cell capable of holding one bit of information. The data can be written by applying appropriate voltage levels to specific memory cells, and it can be read by sensing the voltage levels stored in those cells.

Detailed Application Field Plans

The AT25080B-SSHL-T finds applications in various electronic systems, including but not limited to: - Microcontrollers and embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models to the AT25080B-SSHL-T include: - AT25040B-SSHL-T: 4 kilobits (512 bytes) capacity - AT25160B-SSHL-T: 16 kilobits (2 kilobytes) capacity - AT25320B-SSHL-T: 32 kilobits (4 kilobytes) capacity - AT25640B-SSHL-T: 64 kilobits (8 kilobytes) capacity

These alternative models offer different storage capacities to suit specific application requirements.

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