M29W400DB55ZE6E

Product Overview

Category

M29W400DB55ZE6E belongs to the category of flash memory chips.

Use

It is primarily used for data storage in electronic devices such as smartphones, tablets, digital cameras, and other portable devices.

Characteristics

• Non-volatile memory: The data stored in M29W400DB55ZE6E is retained even when power is turned off.
• High capacity: It has a storage capacity of 4 gigabits (512 megabytes).
• Fast access time: The chip provides quick access to stored data, allowing for efficient retrieval and processing.
• Low power consumption: M29W400DB55ZE6E is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable performance: It offers high reliability and endurance, ensuring data integrity over extended periods of use.

Package and Quantity

M29W400DB55ZE6E is typically packaged in a compact form factor, such as a surface-mount device (SMD) package. The exact package type may vary depending on the manufacturer. It is commonly available in quantities of one or more units per package.

Essence

The essence of M29W400DB55ZE6E lies in its ability to provide reliable and high-capacity data storage in a compact and energy-efficient package.

Specifications

• Storage Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: <100 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 10,000 minimum

Detailed Pin Configuration

The pin configuration of M29W400DB55ZE6E is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/control input

Functional Features

• Erase and Program Operations: M29W400DB55ZE6E supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: It provides the ability to lock specific blocks of memory, preventing accidental modification or erasure.
• Error Correction Code (ECC): The chip incorporates ECC algorithms to detect and correct errors in stored data, enhancing data integrity.
• Software/Hardware Protection: M29W400DB55ZE6E offers various protection mechanisms, including software and hardware write protection, ensuring data security.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable performance
• Flexible erase and program operations
• Error correction capabilities
• Multiple protection mechanisms

Disadvantages

• Limited erase/program cycles (10,000 minimum)
• Higher cost compared to other memory technologies

Working Principles

M29W400DB55ZE6E utilizes a combination of floating-gate transistors and semiconductor technology to store and retrieve data. The memory cells within the chip can be electrically programmed and erased, allowing for non-volatile data storage.

During programming, electrical charges are trapped in the floating gate, altering the threshold voltage of the memory cell. This change in threshold voltage represents the stored data. Erasing the memory involves removing these charges, resetting the threshold voltage to its original state.

The chip's control circuitry manages the read, write, and erase operations, ensuring accurate data manipulation and retrieval.

Detailed Application Field Plans

M29W400DB55ZE6E finds application in various electronic devices that require reliable and high-capacity data storage. Some of the common application fields include:

1. Smartphones and Tablets: Used for storing operating systems, applications, and user data.
2. Digital Cameras: Provides storage for captured images and videos.
3. Portable Media Players: Stores multimedia content such as music, videos, and photos.
4. Automotive Electronics: Used in infotainment systems, navigation units, and other embedded applications.
5. Industrial Control Systems: Provides non-volatile memory for storing critical system data and firmware.

Detailed and Complete Alternative Models

1. M29W400DT: Similar flash memory chip with a different package and pin configuration.
2. M29W800DB: Higher capacity flash memory chip with 8 gigabits (1 gigabyte) storage.
3. M29W160EB: Flash memory chip with extended temperature range (-40°C to +125°C) for harsh environments.
4. M29W640GB: Flash