M29W400DT55ZE6E

Product Overview

Category

M29W400DT55ZE6E belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is removed.
• High capacity: The M29W400DT55ZE6E offers a storage capacity of 4 gigabits (512 megabytes).
• Fast read and write speeds: This flash memory provides quick access to stored data, allowing for efficient data transfer and retrieval.
• Reliable performance: The product is designed to withstand frequent read/write cycles without compromising its functionality.
• Low power consumption: The M29W400DT55ZE6E is energy-efficient, making it suitable for battery-powered devices.
• Compact package: The flash memory is available in a small form factor, enabling easy integration into various electronic devices.

Packaging/Quantity

The M29W400DT55ZE6E is typically packaged in a surface-mount device (SMD) package. It is commonly sold in reels or trays containing multiple units, with quantities varying based on customer requirements.

Specifications

• Manufacturer: [Example Manufacturer]
• Model: M29W400DT55ZE6E
• Memory Type: Flash Memory
• Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface-Mount Device (SMD)
• Pin Count: 48 pins

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. WE#
31. RE#
32. CE#
33. BYTE#
34. WP#
35. RY/BY#
36. VSS
37. DQ0
38. DQ1
39. DQ2
40. DQ3
41. DQ4
42. DQ5
43. DQ6
44. DQ7
45. VCC
46. VCC
47. VSS
48. VSS

Functional Features

• High-speed data transfer: The M29W400DT55ZE6E offers fast read and write speeds, enabling efficient data transfer between the flash memory and the host device.
• Erase and program operations: This flash memory supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Hardware and software protection mechanisms: The product incorporates various protection features to prevent unauthorized access or accidental modification of stored data.
• Error correction codes (ECC): ECC algorithms are implemented to ensure data integrity and reliability during read and write operations.
• Power-saving modes: The M29W400DT55ZE6E includes power-saving features that reduce energy consumption when the device is idle or in standby mode.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Compact form factor
• Reliable performance
• Low power consumption

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may start to degrade.
• Relatively higher cost compared to other types of memory.

Working Principles

The M29W400DT55ZE6E flash memory utilizes a floating-gate transistor technology. It stores data by trapping electric charges in the floating gate, which alters the transistor's conductive properties. The presence or absence of charges determines the binary state (0 or 1) of each memory cell. To read or modify data, specific voltage levels are applied to the appropriate pins, allowing for data retrieval or programming operations.

Detailed Application Field Plans

The M29W400DT55ZE6E flash memory is widely used in various electronic devices that require non-volatile storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Used for storing high-resolution photos and videos.
3. Portable media players: Used for storing music, videos, and