Micron Technology Inc.
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MT29F4G16ABADAH4-IT:D

MT29F4G16ABADAH4-IT:D

Product Overview

Category

MT29F4G16ABADAH4-IT:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F4G16ABADAH4-IT:D offers a storage capacity of 4 gigabits (4 Gb).
  • Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
  • Reliable performance: This NAND flash memory ensures reliable data storage and retrieval.
  • Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G16ABADAH4-IT:D is available in a surface-mount TSOP package. The quantity may vary depending on the manufacturer or supplier.

Specifications

  • Manufacturer: Micron Technology Inc.
  • Part Number: MT29F4G16ABADAH4-IT:D
  • Memory Type: NAND Flash
  • Density: 4 Gb
  • Organization: 512M x 8
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package/Case: TSOP-48

Detailed Pin Configuration

The MT29F4G16ABADAH4-IT:D has a total of 48 pins arranged as follows:

  1. VCC
  2. ALE
  3. CLE
  4. RE#
  5. WE#
  6. WP#
  7. R/B#
  8. CE#
  9. CLE
  10. A0
  11. A1
  12. A2
  13. A3
  14. A4
  15. A5
  16. A6
  17. A7
  18. A8
  19. A9
  20. A10
  21. A11
  22. A12
  23. A13
  24. A14
  25. A15
  26. DQ0
  27. DQ1
  28. DQ2
  29. DQ3
  30. DQ4
  31. DQ5
  32. DQ6
  33. DQ7
  34. VSS
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • Page Read/Program: The MT29F4G16ABADAH4-IT:D allows for reading and programming data at the page level.
  • Block Erase: It supports block erase operations, enabling efficient management of data blocks.
  • Random Access: This NAND flash memory provides random access to individual memory cells, allowing for flexible data retrieval.
  • Error Correction Code (ECC): ECC functionality is integrated into the product to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact package size

Disadvantages

  • Limited endurance: NAND flash memory has a limited number of program/erase cycles before it may become unreliable.
  • Susceptible to electrical interference: NAND flash memory can be affected by electromagnetic interference, potentially leading to data corruption.

Working Principles

The MT29F4G16ABADAH4-IT:D utilizes NAND flash memory technology. It stores data by trapping electric charges in a grid of memory cells. These cells are organized into pages and blocks, allowing for efficient read, write, and erase operations. When data is written, the electric charge is stored in the memory cell. During reading, the charge is detected and converted back into digital data.

Detailed Application Field Plans

The MT29F4G16ABADAH4-IT:D can be used in various applications, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F4G08ABAEAWP-IT: This model offers a lower density of 4 Gb but shares similar characteristics and features.
  2. MT29F4G16ABADAWP-IT: This alternative model has the same density and features as the MT29F4G16ABADAH4-

Orodhesha maswali na majibu 10 ya kawaida yanayohusiana na utumiaji wa MT29F4G16ABADAH4-IT:D katika suluhu za kiufundi

  1. Question: What is the capacity of the MT29F4G16ABADAH4-IT:D memory module?
    Answer: The MT29F4G16ABADAH4-IT:D has a capacity of 4 gigabytes (GB).

  2. Question: What is the interface type supported by the MT29F4G16ABADAH4-IT:D?
    Answer: The MT29F4G16ABADAH4-IT:D supports the NAND Flash interface.

  3. Question: What is the operating voltage range for the MT29F4G16ABADAH4-IT:D?
    Answer: The MT29F4G16ABADAH4-IT:D operates at a voltage range of 2.7V to 3.6V.

  4. Question: Can the MT29F4G16ABADAH4-IT:D be used in industrial applications?
    Answer: Yes, the MT29F4G16ABADAH4-IT:D is suitable for use in industrial applications due to its high reliability and extended temperature range.

  5. Question: Does the MT29F4G16ABADAH4-IT:D support wear-leveling algorithms?
    Answer: Yes, the MT29F4G16ABADAH4-IT:D supports built-in wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells.

  6. Question: What is the maximum data transfer rate of the MT29F4G16ABADAH4-IT:D?
    Answer: The MT29F4G16ABADAH4-IT:D has a maximum data transfer rate of up to 50 megabytes per second (MB/s).

  7. Question: Can the MT29F4G16ABADAH4-IT:D be used in automotive applications?
    Answer: Yes, the MT29F4G16ABADAH4-IT:D is designed to meet the stringent requirements of automotive applications, including high temperature and vibration resistance.

  8. Question: Does the MT29F4G16ABADAH4-IT:D support hardware encryption?
    Answer: No, the MT29F4G16ABADAH4-IT:D does not have built-in hardware encryption capabilities.

  9. Question: Can the MT29F4G16ABADAH4-IT:D be used as a boot device?
    Answer: Yes, the MT29F4G16ABADAH4-IT:D can be used as a boot device in various embedded systems.

  10. Question: Is the MT29F4G16ABADAH4-IT:D compatible with different operating systems?
    Answer: Yes, the MT29F4G16ABADAH4-IT:D is compatible with popular operating systems such as Linux, Windows, and RTOS platforms.