MT44K32M18RB-107:A TR

Basic Information Overview

• Category: Memory Product
• Use: Storage and retrieval of digital information in electronic devices
• Characteristics: High capacity, fast access speed, non-volatile memory
• Package: Integrated circuit (IC) package
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Model: MT44K32M18RB-107:A TR
• Capacity: 32 megabits (4 megabytes)
• Organization: 4 banks x 4,194,304 rows x 2,048 columns
• Voltage Supply: 1.2V
• Speed: 107 MHz
• Interface: Double Data Rate 4 (DDR4)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT44K32M18RB-107:A TR has a total of 260 pins. The pin configuration is as follows:

• Pins 1-78: Address Inputs (A0-A77)
• Pins 79-86: Bank Select Inputs (BA0-BA3)
• Pins 87-94: Column Address Strobe (CAS)
• Pins 95-102: Row Address Strobe (RAS)
• Pins 103-110: Write Enable (WE)
• Pins 111-118: Data Inputs/Outputs (DQ0-DQ63)
• Pins 119-126: Data Mask (DM0-DM7)
• Pins 127-134: Chip Select (CS0-CS3)
• Pins 135-142: Clock (CK, CK#)
• Pins 143-150: Data Strobe (DQS0-DQS7)
• Pins 151-158: Data Strobe Mask (DM0-DM7)
• Pins 159-166: Data Strobe# (DQS0-DQS7#)
• Pins 167-174: Data Strobe Mask# (DM0-DM7#)
• Pins 175-182: Parity (PAR)
• Pins 183-190: Parity Mask (PARITYMASK)
• Pins 191-198: VDD Power Supply
• Pins 199-206: VSS Ground
• Pins 207-214: VREFCA Reference Voltage
• Pins 215-222: VREFDQ Reference Voltage
• Pins 223-230: VREFDQ# Reference Voltage
• Pins 231-238: VREFCA# Reference Voltage
• Pins 239-246: ODT Output Driver Termination
• Pins 247-254: DMI Differential Clock Inputs
• Pins 255-260: NC No Connection

Functional Features

• High-speed data transfer with DDR4 interface
• Low power consumption
• Self-refresh mode for power-saving operation
• On-die termination (ODT) for improved signal integrity
• Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages: - High capacity allows for storage of large amounts of data - Fast access speed enables quick retrieval of information - Non-volatile memory retains data even when power is turned off - DDR4 interface provides faster data transfer rates compared to previous generations

Disadvantages: - Relatively higher power consumption compared to other types of memory - Limited endurance due to the nature of DRAM technology - Requires periodic refresh cycles to maintain data integrity

Working Principles

The MT44K32M18RB-107:A TR is based on dynamic random access memory (DRAM) technology. It stores digital information in a matrix of capacitors, where each capacitor represents a memory cell. The data is stored as electrical charges in these capacitors, and it needs to be periodically refreshed to maintain its integrity. When the device receives a read or write command, the appropriate row and column addresses are selected, allowing the data to be accessed or modified.

Detailed Application Field Plans

The MT44K32M18RB-107:A TR is commonly used in various electronic devices that require high-speed and high-capacity memory, such as: - Personal computers - Servers - Networking equipment - Graphics cards - Consumer electronics (e.g., gaming consoles, smartphones)

Detailed and Complete Alternative Models

Some alternative models to the MT44K32M18RB-107:A TR include: - MT44K32M18RB-083:A TR: Similar specifications but operates at 83 MHz speed - MT44K32M18RB-120:A TR: Similar specifications but operates at 120 MHz speed - MT44K32M18RB-133:A TR: Similar specifications but operates at 133 MHz speed

These alternative models offer different operating speeds to cater to specific performance requirements.

*Word count