Vishay Semiconductor Diodes Division
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3KASMC33AHM3_B/H
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3KASMC33AHM3_B/H Product Overview

Introduction

The 3KASMC33AHM3_B/H is a versatile electronic component that belongs to the category of transient voltage suppressor diodes. This entry provides an in-depth overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Transient Voltage Suppressor Diodes
  • Use: Protection against voltage transients in electronic circuits
  • Characteristics: High surge capability, low clamping voltage, fast response time
  • Package: SMC (DO-214AB), Tape & Reel
  • Essence: Safeguarding sensitive electronic components from voltage spikes
  • Packaging/Quantity: Available in tape and reel packaging with varying quantities

Specifications

  • Part Number: 3KASMC33AHM3_B/H
  • Peak Pulse Power: 3000W
  • Standoff Voltage: 28.2V
  • Breakdown Voltage: 31.4V
  • Maximum Clamping Voltage: 45.7V
  • Operating Temperature Range: -55°C to +150°C
  • Storage Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 3KASMC33AHM3_B/H features a standard SMC (DO-214AB) package with two pins for connection to the circuit.

Functional Features

  • Transient Voltage Suppression: Effectively clamps transient overvoltage to protect downstream components.
  • Fast Response Time: Rapid reaction to voltage transients ensures minimal impact on the circuit.

Advantages and Disadvantages

Advantages

  • High surge capability
  • Low clamping voltage
  • Fast response time

Disadvantages

  • Relatively higher cost compared to traditional diodes
  • Sensitive to reverse voltage polarity

Working Principles

The 3KASMC33AHM3_B/H operates by diverting excess voltage away from sensitive components, thereby preventing damage due to transient voltage spikes. When a transient event occurs, the diode rapidly conducts, shunting the excess energy to ground and limiting the voltage across the protected circuit.

Detailed Application Field Plans

The 3KASMC33AHM3_B/H finds extensive use in various applications, including: - Power supply units - Communication equipment - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

  • Alternative Model 1: 3KASMC36AHM3_B/H
  • Alternative Model 2: 3KASMC40AHM3_B/H
  • Alternative Model 3: 3KASMC48AHM3_B/H

In conclusion, the 3KASMC33AHM3_B/H transient voltage suppressor diode offers robust protection against voltage transients, making it an essential component in modern electronic systems.

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Orodhesha maswali na majibu 10 ya kawaida yanayohusiana na utumiaji wa 3KASMC33AHM3_B/H katika suluhu za kiufundi

  1. What is 3KASMC33AHM3_B/H?

    • 3KASMC33AHM3_B/H is a high-power, high-frequency silicon carbide (SiC) Schottky diode designed for various technical solutions requiring efficient power conversion.

  2. What are the key features of 3KASMC33AHM3_B/H?

    • The key features include high current capability, low forward voltage drop, fast switching speed, and high temperature operation, making it suitable for demanding technical applications.

  3. In what technical solutions can 3KASMC33AHM3_B/H be used?

    • 3KASMC33AHM3_B/H can be used in applications such as power supplies, solar inverters, motor drives, electric vehicles, and other high-power electronic systems.

  4. What are the advantages of using 3KASMC33AHM3_B/H in technical solutions?

    • The advantages include improved efficiency, reduced power losses, compact design, and enhanced reliability compared to traditional silicon diodes.

  5. What is the maximum operating temperature of 3KASMC33AHM3_B/H?

    • The maximum operating temperature is typically up to 175°C, allowing for reliable performance in high-temperature environments.

  6. Does 3KASMC33AHM3_B/H require any special cooling or heat dissipation methods?

    • Depending on the application and operating conditions, proper thermal management such as heatsinking or active cooling may be necessary to maintain optimal performance.

  7. Can 3KASMC33AHM3_B/H be used in parallel configurations for higher current handling?

    • Yes, 3KASMC33AHM3_B/H can be used in parallel to increase current-handling capability, providing scalability for different technical solutions.

  8. What are the typical applications where 3KASMC33AHM3_B/H outperforms traditional silicon diodes?

    • 3KASMC33AHM3_B/H excels in applications requiring high-frequency operation, high efficiency, and high-temperature resilience, making it ideal for advanced power electronics.

  9. Are there any specific considerations for driving 3KASMC33AHM3_B/H in technical solutions?

    • Proper gate drive circuitry and control mechanisms should be implemented to ensure safe and efficient operation of 3KASMC33AHM3_B/H in various technical solutions.

  10. Where can I find detailed technical specifications and application notes for 3KASMC33AHM3_B/H?

    • Detailed technical specifications and application notes for 3KASMC33AHM3_B/H can be found in the product datasheet provided by the manufacturer or through authorized distributors and technical resources.