SIHF065N60E-GE3
Product Overview
Category: Power Semiconductor
Use: High-frequency switching applications
Characteristics: Fast switching, low on-state resistance, high reliability
Package: TO-220 FullPak
Essence: Silicon Carbide Power MOSFET
Packaging/Quantity: Tube/50
Specifications
- Voltage - Rated: 600V
- Current - Non-Repetitive Surge: 40A
- Rds On (Max): 650 mOhm
- Gate Charge (Qg) @ Vgs: 45nC @ 20V
- Input Capacitance (Ciss) @ Vds: 3600pF @ 25V
- Power Dissipation (Max): 125W
Detailed Pin Configuration
- Gate
- Drain
- Source
Functional Features
- Fast switching speed
- Low on-state resistance
- High temperature operation capability
- Enhanced power efficiency
Advantages and Disadvantages
Advantages: - Improved power density - Reduced system size and weight - Enhanced thermal performance
Disadvantages: - Higher cost compared to traditional silicon-based devices - Sensitivity to overvoltage conditions
Working Principles
The SIHF065N60E-GE3 utilizes silicon carbide technology to achieve fast switching speeds and low on-state resistance. When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals, allowing for efficient power control in high-frequency switching applications.
Detailed Application Field Plans
This product is ideal for use in: - Switch-mode power supplies - Solar inverters - Motor drives - Electric vehicle charging systems
Detailed and Complete Alternative Models
- SCT2H12NZGC11
- C3M0075120K
In conclusion, the SIHF065N60E-GE3 is a high-performance silicon carbide power MOSFET designed for high-frequency switching applications. Its fast switching speed, low on-state resistance, and high reliability make it suitable for various power electronics applications.
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Orodhesha maswali na majibu 10 ya kawaida yanayohusiana na utumiaji wa SIHF065N60E-GE3 katika suluhu za kiufundi
What is the maximum drain-source voltage of SIHF065N60E-GE3?
- The maximum drain-source voltage of SIHF065N60E-GE3 is 600V.
What is the continuous drain current rating of SIHF065N60E-GE3?
- The continuous drain current rating of SIHF065N60E-GE3 is 65A.
What is the on-resistance of SIHF065N60E-GE3?
- The on-resistance of SIHF065N60E-GE3 is typically 0.065 ohms.
What type of package does SIHF065N60E-GE3 come in?
- SIHF065N60E-GE3 comes in a TO-220 Full Pack package.
What are the typical applications for SIHF065N60E-GE3?
- SIHF065N60E-GE3 is commonly used in applications such as motor drives, inverters, and power supplies.
What is the operating temperature range of SIHF065N60E-GE3?
- The operating temperature range of SIHF065N60E-GE3 is -55°C to 150°C.
Does SIHF065N60E-GE3 have built-in protection features?
- SIHF065N60E-GE3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
Is SIHF065N60E-GE3 suitable for high-frequency switching applications?
- Yes, SIHF065N60E-GE3 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
What gate drive voltage is recommended for SIHF065N60E-GE3?
- A gate drive voltage of 10V is typically recommended for optimal performance of SIHF065N60E-GE3.
Are there any thermal considerations when using SIHF065N60E-GE3 in a design?
- Yes, proper thermal management is important when using SIHF065N60E-GE3 to ensure efficient heat dissipation and reliable operation.