Diode/Bridge Rectifier
Nambari ya Sehemu
PANJIT (Qiangmao)
Watengenezaji
Maelezo
71279 PCS
Katika Hisa
Nambari ya Sehemu
YANGJIE (Yang Jie)
Watengenezaji
BAS70T-F2-0000HF
Maelezo
50042 PCS
Katika Hisa
Nambari ya Sehemu
ST (STMicroelectronics)
Watengenezaji
100V, 20A, VF=0.85V@2A
Maelezo
80161 PCS
Katika Hisa
Nambari ya Sehemu
SY (Shunye)
Watengenezaji
VR reverse voltage/600V; IR reverse leakage/5.0uA; VF forward voltage/1.7V; IO average current/3.0A; TRR recovery time/35nS
Maelezo
84615 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
The Schottky rectifier uses the Schottky barrier principle and uses a large area metal-silicon power diode. The advanced geometry of this Schottky rectifier features chromium barrier metal, epitaxial structure with oxide passivation, and metal-covered contacts. The rectifier is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.
Maelezo
87274 PCS
Katika Hisa
Nambari ya Sehemu
FUXINSEMI (Fuxin Senmei)
Watengenezaji
Maelezo
80927 PCS
Katika Hisa
Nambari ya Sehemu
FUXINSEMI (Fuxin Senmei)
Watengenezaji
Maelezo
91342 PCS
Katika Hisa
Nambari ya Sehemu
CJ (Jiangsu Changdian/Changjing)
Watengenezaji
Maelezo
55620 PCS
Katika Hisa
Nambari ya Sehemu
Crystal Conductor Microelectronics
Watengenezaji
Maelezo
89715 PCS
Katika Hisa
