Triode/MOS tube/transistor/module

OSRAM (OSRAM)
Watengenezaji
Maelezo
92411 PCS
Katika Hisa
Nambari ya Sehemu
ST (STMicroelectronics)
Watengenezaji
Maelezo
51274 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
The NFAL5065L4BT is an advanced Motion SPM module providing a fully functional, high performance inverter output stage for AC induction, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting . Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Each phase has separate negative IGBT terminals to support the widest range of control algorithms.
Maelezo
71714 PCS
Katika Hisa
Nambari ya Sehemu
Infineon (Infineon)
Watengenezaji
Maelezo
65908 PCS
Katika Hisa
Nambari ya Sehemu
Infineon (Infineon)
Watengenezaji
Maelezo
99139 PCS
Katika Hisa
Nambari ya Sehemu
Infineon (Infineon)
Watengenezaji
Maelezo
88558 PCS
Katika Hisa
Nambari ya Sehemu
Infineon (Infineon)
Watengenezaji
Maelezo
97793 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
Maelezo
82231 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.
Maelezo
75832 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
Maelezo
51021 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
Maelezo
99609 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
Maelezo
89922 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
Maelezo
56599 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
These N-Channel Power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest on-state resistance per silicon area, resulting in outstanding performance. The device is capable of withstanding high energy in avalanche mode and the diode has extremely low reverse recovery time and stored charge. The device is designed for applications where energy efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Maelezo
56206 PCS
Katika Hisa
Nambari ya Sehemu
RENESAS (Renesas)/IDT
Watengenezaji
Maelezo
50038 PCS
Katika Hisa
Nambari ya Sehemu
RENESAS (Renesas)/IDT
Watengenezaji
Maelezo
82378 PCS
Katika Hisa
Nambari ya Sehemu
RENESAS (Renesas)/IDT
Watengenezaji
Maelezo
57055 PCS
Katika Hisa
Nambari ya Sehemu
RENESAS (Renesas)/IDT
Watengenezaji
Maelezo
50153 PCS
Katika Hisa
Nambari ya Sehemu
RENESAS (Renesas)/IDT
Watengenezaji
Maelezo
93451 PCS
Katika Hisa
Nambari ya Sehemu
ROHM (Rohm)
Watengenezaji
Maelezo
58375 PCS
Katika Hisa