Triode/MOS tube/transistor/module
Nambari ya Sehemu
HXY MOSFET (Huaxuanyang Electronics)
Watengenezaji
Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 50V, ID current 220mA, RDON on-resistance 2R@VGS 10V(MAX), VGS(th) turn-on voltage 0.8-1.5V
Maelezo
91535 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
Maelezo
63291 PCS
Katika Hisa
Nambari ya Sehemu
BORN (Born Semiconductor)
Watengenezaji
ransistors,NPN 40V 500mA 300mW HFE=200～350 ,SOT-23
Maelezo
74299 PCS
Katika Hisa
Nambari ya Sehemu
GOFORD (valley peak)
Watengenezaji
650V 11A 360mΩ@10V
Maelezo
62065 PCS
Katika Hisa
Nambari ya Sehemu
NCE (Wuxi New Clean Energy)
Watengenezaji
Maelezo
89547 PCS
Katika Hisa
Nambari ya Sehemu
TECH PUBLIC (Taizhou)
Watengenezaji
Maelezo
61267 PCS
Katika Hisa
Nambari ya Sehemu
ST (STMicroelectronics)
Watengenezaji
41A, 800V, triac.
Maelezo
57381 PCS
Katika Hisa
Nambari ya Sehemu
ST (STMicroelectronics)
Watengenezaji
41A, 800V, triac.
Maelezo
59398 PCS
Katika Hisa
Nambari ya Sehemu
CBI (Creation Foundation)
Watengenezaji
Maelezo
64487 PCS
Katika Hisa
