The H11AG1M series consists of an AlGaAs infrared emitting diode coupled with a silicon phototransistor using dual-row plug-inencapsulation. This device has the unique feature of high current transfer ratio at low output voltage and low input current. This feature makes it ideal for low power logic circuits, telecom equipment and portable electronic isolation applications
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.