onsemi (Ansemi)
Picha inaweza kuwa uwakilishi.
Angalia vipimo kwa maelezo ya bidhaa.
NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Nambari ya Sehemu
NCP5106BDR2G
Kategoria
Power Chip > Gate Driver IC
Mtengenezaji/Chapa
onsemi (Ansemi)
Ufungaji
SOIC-8-150mil
Ufungashaji
taping
Idadi ya vifurushi
2500
Maelezo
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 75348 PCS
Maelezo ya Mawasiliano
Maneno muhimu ya NCP5106BDR2G
NCP5106BDR2G Vipengele vya elektroniki
NCP5106BDR2G Mauzo
NCP5106BDR2G Msambazaji
NCP5106BDR2G Msambazaji
NCP5106BDR2G Jedwali la data
NCP5106BDR2G Picha
NCP5106BDR2G Bei
NCP5106BDR2G Toa
NCP5106BDR2G Bei ya chini
NCP5106BDR2G Tafuta
NCP5106BDR2G Ununuzi
NCP5106BDR2G Chip