IPB80N06S2L06ATMA1
MOSFET N-CH 55V 80A TO263-3
Nambari ya Sehemu
IPB80N06S2L06ATMA1
Mtengenezaji/Chapa
Mfululizo
OptiMOS™
Hali ya Sehemu
Discontinued at Digi-Key
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
PG-TO263-3-2
Upotezaji wa Nguvu (Upeo)
250W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
55V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
80A (Tc)
Rds On (Max) @ Id, Vgs
6 mOhm @ 69A, 10V
Vgs(th) (Max) @ Kitambulisho
2V @ 180µA
Malipo ya Lango (Qg) (Max) @ Vgs
150nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
3800pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 39070 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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