IPD040N03LGATMA1
MOSFET N-CH 30V 90A TO252-3
Nambari ya Sehemu
IPD040N03LGATMA1
Mtengenezaji/Chapa
Mfululizo
OptiMOS™
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Wasambazaji
PG-TO252-3
Upotezaji wa Nguvu (Upeo)
79W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
90A (Tc)
Rds On (Max) @ Id, Vgs
4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Kitambulisho
2.2V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
38nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
3900pF @ 15V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 53639 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IPD040N03LGATMA1
IPD040N03LGATMA1 Vipengele vya elektroniki
IPD040N03LGATMA1 Mauzo
IPD040N03LGATMA1 Msambazaji
IPD040N03LGATMA1 Msambazaji
IPD040N03LGATMA1 Jedwali la data
IPD040N03LGATMA1 Picha
IPD040N03LGATMA1 Bei
IPD040N03LGATMA1 Toa
IPD040N03LGATMA1 Bei ya chini
IPD040N03LGATMA1 Tafuta
IPD040N03LGATMA1 Ununuzi
IPD040N03LGATMA1 Chip