IPW60R180P7XKSA1
MOSFET N-CH 650V 18A TO247-3
Nambari ya Sehemu
IPW60R180P7XKSA1
Mtengenezaji/Chapa
Mfululizo
CoolMOS™ P7
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
PG-TO247-3
Upotezaji wa Nguvu (Upeo)
72W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
650V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
18A (Tc)
Rds On (Max) @ Id, Vgs
180 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 280µA
Malipo ya Lango (Qg) (Max) @ Vgs
25nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1081pF @ 400V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 33152 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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IPW60R180P7XKSA1 Chip