IXFA6N120P
MOSFET N-CH 1200V 6A D2PAK
Nambari ya Sehemu
IXFA6N120P
Mtengenezaji/Chapa
Mfululizo
HiPerFET™, PolarP2™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
TO-263 (IXFA)
Upotezaji wa Nguvu (Upeo)
250W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
6A (Tc)
Rds On (Max) @ Id, Vgs
2.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 1mA
Malipo ya Lango (Qg) (Max) @ Vgs
92nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2830pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 35617 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFA6N120P
IXFA6N120P Vipengele vya elektroniki
IXFA6N120P Mauzo
IXFA6N120P Msambazaji
IXFA6N120P Msambazaji
IXFA6N120P Jedwali la data
IXFA6N120P Picha
IXFA6N120P Bei
IXFA6N120P Toa
IXFA6N120P Bei ya chini
IXFA6N120P Tafuta
IXFA6N120P Ununuzi
IXFA6N120P Chip