IXFB44N100P
MOSFET N-CH 1000V 44A PLUS264
Nambari ya Sehemu
IXFB44N100P
Mtengenezaji/Chapa
Mfululizo
HiPerFET™, PolarP2™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-264-3, TO-264AA
Kifurushi cha Kifaa cha Wasambazaji
PLUS264™
Upotezaji wa Nguvu (Upeo)
1250W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1000V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
44A (Tc)
Rds On (Max) @ Id, Vgs
220 mOhm @ 22A, 10V
Vgs(th) (Max) @ Kitambulisho
6.5V @ 1mA
Malipo ya Lango (Qg) (Max) @ Vgs
305nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
19000pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 32261 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFB44N100P
IXFB44N100P Vipengele vya elektroniki
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IXFB44N100P Msambazaji
IXFB44N100P Jedwali la data
IXFB44N100P Picha
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IXFB44N100P Chip