IXFB60N80P
MOSFET N-CH 800V 60A PLUS264
Nambari ya Sehemu
IXFB60N80P
Mtengenezaji/Chapa
Mfululizo
HiPerFET™, PolarHT™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-264-3, TO-264AA
Kifurushi cha Kifaa cha Wasambazaji
PLUS264™
Upotezaji wa Nguvu (Upeo)
1250W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
800V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
60A (Tc)
Rds On (Max) @ Id, Vgs
140 mOhm @ 30A, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 8mA
Malipo ya Lango (Qg) (Max) @ Vgs
250nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
18000pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 15528 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFB60N80P
IXFB60N80P Vipengele vya elektroniki
IXFB60N80P Mauzo
IXFB60N80P Msambazaji
IXFB60N80P Msambazaji
IXFB60N80P Jedwali la data
IXFB60N80P Picha
IXFB60N80P Bei
IXFB60N80P Toa
IXFB60N80P Bei ya chini
IXFB60N80P Tafuta
IXFB60N80P Ununuzi
IXFB60N80P Chip