IXFK120N30T
MOSFET N-CH 300V 120A TO-264
Nambari ya Sehemu
IXFK120N30T
Mtengenezaji/Chapa
Mfululizo
GigaMOS™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-264-3, TO-264AA
Kifurushi cha Kifaa cha Wasambazaji
TO-264AA (IXFK)
Upotezaji wa Nguvu (Upeo)
960W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
300V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
120A (Tc)
Rds On (Max) @ Id, Vgs
24 mOhm @ 60A, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 4mA
Malipo ya Lango (Qg) (Max) @ Vgs
265nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
20000pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 41386 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFK120N30T
IXFK120N30T Vipengele vya elektroniki
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IXFK120N30T Msambazaji
IXFK120N30T Msambazaji
IXFK120N30T Jedwali la data
IXFK120N30T Picha
IXFK120N30T Bei
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IXFK120N30T Bei ya chini
IXFK120N30T Tafuta
IXFK120N30T Ununuzi
IXFK120N30T Chip