IXFK26N100P
MOSFET N-CH 1000V 26A TO-264
Nambari ya Sehemu
IXFK26N100P
Mtengenezaji/Chapa
Mfululizo
HiPerFET™, PolarP2™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-264-3, TO-264AA
Kifurushi cha Kifaa cha Wasambazaji
TO-264AA (IXFK)
Upotezaji wa Nguvu (Upeo)
780W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1000V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
26A (Tc)
Rds On (Max) @ Id, Vgs
390 mOhm @ 13A, 10V
Vgs(th) (Max) @ Kitambulisho
6.5V @ 1mA
Malipo ya Lango (Qg) (Max) @ Vgs
197nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
11900pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 45062 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFK26N100P
IXFK26N100P Vipengele vya elektroniki
IXFK26N100P Mauzo
IXFK26N100P Msambazaji
IXFK26N100P Msambazaji
IXFK26N100P Jedwali la data
IXFK26N100P Picha
IXFK26N100P Bei
IXFK26N100P Toa
IXFK26N100P Bei ya chini
IXFK26N100P Tafuta
IXFK26N100P Ununuzi
IXFK26N100P Chip