IXFK360N10T
MOSFET N-CH 100V 360A TO-264
Nambari ya Sehemu
IXFK360N10T
Mtengenezaji/Chapa
Mfululizo
GigaMOS™ HiPerFET™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-264-3, TO-264AA
Kifurushi cha Kifaa cha Wasambazaji
TO-264AA (IXFK)
Upotezaji wa Nguvu (Upeo)
1250W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
360A (Tc)
Rds On (Max) @ Id, Vgs
2.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 3mA
Malipo ya Lango (Qg) (Max) @ Vgs
525nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
33000pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 26867 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFK360N10T
IXFK360N10T Vipengele vya elektroniki
IXFK360N10T Mauzo
IXFK360N10T Msambazaji
IXFK360N10T Msambazaji
IXFK360N10T Jedwali la data
IXFK360N10T Picha
IXFK360N10T Bei
IXFK360N10T Toa
IXFK360N10T Bei ya chini
IXFK360N10T Tafuta
IXFK360N10T Ununuzi
IXFK360N10T Chip