IXFL82N60P
MOSFET N-CH 600V 55A ISOPLUS 264
Nambari ya Sehemu
IXFL82N60P
Mtengenezaji/Chapa
Mfululizo
HiPerFET™, PolarHT™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
ISOPLUS264™
Kifurushi cha Kifaa cha Wasambazaji
ISOPLUS264™
Upotezaji wa Nguvu (Upeo)
625W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
55A (Tc)
Rds On (Max) @ Id, Vgs
78 mOhm @ 41A, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 8mA
Malipo ya Lango (Qg) (Max) @ Vgs
240nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
23000pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 33144 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFL82N60P
IXFL82N60P Vipengele vya elektroniki
IXFL82N60P Mauzo
IXFL82N60P Msambazaji
IXFL82N60P Msambazaji
IXFL82N60P Jedwali la data
IXFL82N60P Picha
IXFL82N60P Bei
IXFL82N60P Toa
IXFL82N60P Bei ya chini
IXFL82N60P Tafuta
IXFL82N60P Ununuzi
IXFL82N60P Chip