IXFN20N120
MOSFET N-CH 1200V 20A SOT-227B
Nambari ya Sehemu
IXFN20N120
Mtengenezaji/Chapa
Mfululizo
HiPerFET™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Chassis Mount
Kifurushi / Kesi
SOT-227-4, miniBLOC
Kifurushi cha Kifaa cha Wasambazaji
SOT-227B
Upotezaji wa Nguvu (Upeo)
780W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
20A (Tc)
Rds On (Max) @ Id, Vgs
750 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 8mA
Malipo ya Lango (Qg) (Max) @ Vgs
160nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
7400pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 14632 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFN20N120
IXFN20N120 Vipengele vya elektroniki
IXFN20N120 Mauzo
IXFN20N120 Msambazaji
IXFN20N120 Msambazaji
IXFN20N120 Jedwali la data
IXFN20N120 Picha
IXFN20N120 Bei
IXFN20N120 Toa
IXFN20N120 Bei ya chini
IXFN20N120 Tafuta
IXFN20N120 Ununuzi
IXFN20N120 Chip