IXFQ50N60P3
MOSFET N-CH 600V 50A TO3P
Nambari ya Sehemu
IXFQ50N60P3
Mtengenezaji/Chapa
Mfululizo
HiPerFET™, Polar3™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-3P-3, SC-65-3
Kifurushi cha Kifaa cha Wasambazaji
TO-3P
Upotezaji wa Nguvu (Upeo)
1040W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
50A (Tc)
Rds On (Max) @ Id, Vgs
145 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 4mA
Malipo ya Lango (Qg) (Max) @ Vgs
94nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
6300pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 37675 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFQ50N60P3
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IXFQ50N60P3 Chip