IXFX26N100P
MOSFET N-CH 1000V 26A PLUS247
Nambari ya Sehemu
IXFX26N100P
Mtengenezaji/Chapa
Mfululizo
HiPerFET™, PolarP2™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
PLUS247™-3
Upotezaji wa Nguvu (Upeo)
780W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1000V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
26A (Tc)
Rds On (Max) @ Id, Vgs
390 mOhm @ 13A, 10V
Vgs(th) (Max) @ Kitambulisho
6.5V @ 1mA
Malipo ya Lango (Qg) (Max) @ Vgs
197nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
11900pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 40842 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFX26N100P
IXFX26N100P Vipengele vya elektroniki
IXFX26N100P Mauzo
IXFX26N100P Msambazaji
IXFX26N100P Msambazaji
IXFX26N100P Jedwali la data
IXFX26N100P Picha
IXFX26N100P Bei
IXFX26N100P Toa
IXFX26N100P Bei ya chini
IXFX26N100P Tafuta
IXFX26N100P Ununuzi
IXFX26N100P Chip