IXFX26N120P
MOSFET N-CH 1200V 26A PLUS247
Nambari ya Sehemu
IXFX26N120P
Mtengenezaji/Chapa
Mfululizo
HiPerFET™, PolarP2™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
PLUS247™-3
Upotezaji wa Nguvu (Upeo)
960W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
26A (Tc)
Rds On (Max) @ Id, Vgs
500 mOhm @ 13A, 10V
Vgs(th) (Max) @ Kitambulisho
6.5V @ 1mA
Malipo ya Lango (Qg) (Max) @ Vgs
225nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
16000pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa chen_hx1688@hotmail.com, tutajibu haraka iwezekanavyo.
Katika Hisa 12250 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXFX26N120P
IXFX26N120P Vipengele vya elektroniki
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IXFX26N120P Msambazaji
IXFX26N120P Msambazaji
IXFX26N120P Jedwali la data
IXFX26N120P Picha
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IXFX26N120P Chip