IXTA14N60P
MOSFET N-CH 600V 14A D2-PAK
Nambari ya Sehemu
IXTA14N60P
Mtengenezaji/Chapa
Mfululizo
PolarHV™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
TO-263 (IXTA)
Upotezaji wa Nguvu (Upeo)
300W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
14A (Tc)
Rds On (Max) @ Id, Vgs
550 mOhm @ 7A, 10V
Vgs(th) (Max) @ Kitambulisho
5.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
36nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2500pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 21805 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTA14N60P
IXTA14N60P Vipengele vya elektroniki
IXTA14N60P Mauzo
IXTA14N60P Msambazaji
IXTA14N60P Msambazaji
IXTA14N60P Jedwali la data
IXTA14N60P Picha
IXTA14N60P Bei
IXTA14N60P Toa
IXTA14N60P Bei ya chini
IXTA14N60P Tafuta
IXTA14N60P Ununuzi
IXTA14N60P Chip