IXTA1N120P
MOSFET N-CH 1200V 1A TO-263
Nambari ya Sehemu
IXTA1N120P
Mtengenezaji/Chapa
Mfululizo
PolarVHV™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
TO-263 (IXTA)
Upotezaji wa Nguvu (Upeo)
63W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
1A (Tc)
Rds On (Max) @ Id, Vgs
20 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 50µA
Malipo ya Lango (Qg) (Max) @ Vgs
17.6nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
550pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 13555 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTA1N120P
IXTA1N120P Vipengele vya elektroniki
IXTA1N120P Mauzo
IXTA1N120P Msambazaji
IXTA1N120P Msambazaji
IXTA1N120P Jedwali la data
IXTA1N120P Picha
IXTA1N120P Bei
IXTA1N120P Toa
IXTA1N120P Bei ya chini
IXTA1N120P Tafuta
IXTA1N120P Ununuzi
IXTA1N120P Chip