IXTA2R4N120P
MOSFET N-CH 1200V 2.4A TO-263
Nambari ya Sehemu
IXTA2R4N120P
Mtengenezaji/Chapa
Mfululizo
Polar™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
TO-263 (IXTA)
Upotezaji wa Nguvu (Upeo)
125W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
2.4A (Tc)
Rds On (Max) @ Id, Vgs
7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
37nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1207pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 23502 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTA2R4N120P
IXTA2R4N120P Vipengele vya elektroniki
IXTA2R4N120P Mauzo
IXTA2R4N120P Msambazaji
IXTA2R4N120P Msambazaji
IXTA2R4N120P Jedwali la data
IXTA2R4N120P Picha
IXTA2R4N120P Bei
IXTA2R4N120P Toa
IXTA2R4N120P Bei ya chini
IXTA2R4N120P Tafuta
IXTA2R4N120P Ununuzi
IXTA2R4N120P Chip