IXTA3N100P
MOSFET N-CH 1000V 3A TO-263
Nambari ya Sehemu
IXTA3N100P
Mtengenezaji/Chapa
Mfululizo
PolarVHV™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
TO-263 (IXTA)
Upotezaji wa Nguvu (Upeo)
125W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1000V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
3A (Tc)
Rds On (Max) @ Id, Vgs
4.8 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
39nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1100pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 42703 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTA3N100P
IXTA3N100P Vipengele vya elektroniki
IXTA3N100P Mauzo
IXTA3N100P Msambazaji
IXTA3N100P Msambazaji
IXTA3N100P Jedwali la data
IXTA3N100P Picha
IXTA3N100P Bei
IXTA3N100P Toa
IXTA3N100P Bei ya chini
IXTA3N100P Tafuta
IXTA3N100P Ununuzi
IXTA3N100P Chip