IXTA76P10T
MOSFET P-CH 100V 76A TO-263
Nambari ya Sehemu
IXTA76P10T
Mtengenezaji/Chapa
Mfululizo
TrenchP™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
TO-263 (IXTA)
Upotezaji wa Nguvu (Upeo)
298W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
76A (Tc)
Rds On (Max) @ Id, Vgs
25 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
197nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
13700pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±15V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 9884 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTA76P10T
IXTA76P10T Vipengele vya elektroniki
IXTA76P10T Mauzo
IXTA76P10T Msambazaji
IXTA76P10T Msambazaji
IXTA76P10T Jedwali la data
IXTA76P10T Picha
IXTA76P10T Bei
IXTA76P10T Toa
IXTA76P10T Bei ya chini
IXTA76P10T Tafuta
IXTA76P10T Ununuzi
IXTA76P10T Chip