IXTH120P065T
MOSFET P-CH 65V 120A TO-247
Nambari ya Sehemu
IXTH120P065T
Mtengenezaji/Chapa
Mfululizo
TrenchP™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
TO-247 (IXTH)
Upotezaji wa Nguvu (Upeo)
298W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
65V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
120A (Tc)
Rds On (Max) @ Id, Vgs
10 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
185nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
13200pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±15V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 37080 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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IXTH120P065T Chip