IXTH12N100
MOSFET N-CH 1000V 12A TO-247
Nambari ya Sehemu
IXTH12N100
Mtengenezaji/Chapa
Mfululizo
MegaMOS™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
TO-247 (IXTH)
Upotezaji wa Nguvu (Upeo)
300W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1000V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
12A (Tc)
Rds On (Max) @ Id, Vgs
1.05 Ohm @ 6A, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
170nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
4000pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 43653 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTH12N100
IXTH12N100 Vipengele vya elektroniki
IXTH12N100 Mauzo
IXTH12N100 Msambazaji
IXTH12N100 Msambazaji
IXTH12N100 Jedwali la data
IXTH12N100 Picha
IXTH12N100 Bei
IXTH12N100 Toa
IXTH12N100 Bei ya chini
IXTH12N100 Tafuta
IXTH12N100 Ununuzi
IXTH12N100 Chip