IXTH20N65X
MOSFET N-CH 650V 20A TO-247
Nambari ya Sehemu
IXTH20N65X
Mtengenezaji/Chapa
Mfululizo
-
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
TO-247 (IXTH)
Upotezaji wa Nguvu (Upeo)
320W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
650V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
20A (Tc)
Rds On (Max) @ Id, Vgs
210 mOhm @ 10A, 10V
Vgs(th) (Max) @ Kitambulisho
5.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
35nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1390pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 28431 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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