IXTH30N60P
MOSFET N-CH 600V 30A TO-247
Nambari ya Sehemu
IXTH30N60P
Mtengenezaji/Chapa
Mfululizo
PolarHV™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
TO-247 (IXTH)
Upotezaji wa Nguvu (Upeo)
540W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
30A (Tc)
Rds On (Max) @ Id, Vgs
240 mOhm @ 15A, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
82nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
5050pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 51818 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTH30N60P
IXTH30N60P Vipengele vya elektroniki
IXTH30N60P Mauzo
IXTH30N60P Msambazaji
IXTH30N60P Msambazaji
IXTH30N60P Jedwali la data
IXTH30N60P Picha
IXTH30N60P Bei
IXTH30N60P Toa
IXTH30N60P Bei ya chini
IXTH30N60P Tafuta
IXTH30N60P Ununuzi
IXTH30N60P Chip