IXTH3N200P3HV
MOSFET N-CH 2000V 3A TO-247
Nambari ya Sehemu
IXTH3N200P3HV
Mtengenezaji/Chapa
Mfululizo
-
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
TO-247
Upotezaji wa Nguvu (Upeo)
520W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
2000V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
3A (Tc)
Rds On (Max) @ Id, Vgs
8 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
70nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1860pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 34245 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTH3N200P3HV
IXTH3N200P3HV Vipengele vya elektroniki
IXTH3N200P3HV Mauzo
IXTH3N200P3HV Msambazaji
IXTH3N200P3HV Msambazaji
IXTH3N200P3HV Jedwali la data
IXTH3N200P3HV Picha
IXTH3N200P3HV Bei
IXTH3N200P3HV Toa
IXTH3N200P3HV Bei ya chini
IXTH3N200P3HV Tafuta
IXTH3N200P3HV Ununuzi
IXTH3N200P3HV Chip