IXTP1N120P
MOSFET N-CH 1200V 1A TO-220
Nambari ya Sehemu
IXTP1N120P
Mtengenezaji/Chapa
Mfululizo
PolarVHV™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-220-3
Kifurushi cha Kifaa cha Wasambazaji
TO-220AB
Upotezaji wa Nguvu (Upeo)
63W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
1A (Tc)
Rds On (Max) @ Id, Vgs
20 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 50µA
Malipo ya Lango (Qg) (Max) @ Vgs
17.6nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
550pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 28625 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTP1N120P
IXTP1N120P Vipengele vya elektroniki
IXTP1N120P Mauzo
IXTP1N120P Msambazaji
IXTP1N120P Msambazaji
IXTP1N120P Jedwali la data
IXTP1N120P Picha
IXTP1N120P Bei
IXTP1N120P Toa
IXTP1N120P Bei ya chini
IXTP1N120P Tafuta
IXTP1N120P Ununuzi
IXTP1N120P Chip