IXYS
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IXTQ16N50P
Tazama Maelezo Zaidi DataSheets

IXTQ16N50P

MOSFET N-CH 500V 16A TO-3P
Nambari ya Sehemu
IXTQ16N50P
Mtengenezaji/Chapa
IXYS
Mfululizo
PolarHV™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-3P-3, SC-65-3
Kifurushi cha Kifaa cha Wasambazaji
TO-3P
Upotezaji wa Nguvu (Upeo)
300W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
500V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
16A (Tc)
Rds On (Max) @ Id, Vgs
400 mOhm @ 8A, 10V
Vgs(th) (Max) @ Kitambulisho
5.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
43nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2250pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 18418 PCS
Maelezo ya Mawasiliano
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