IXYS
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IXTQ30N60L2
Tazama Maelezo Zaidi DataSheets

IXTQ30N60L2

MOSFET N-CH 600V 30A TO-3P
Nambari ya Sehemu
IXTQ30N60L2
Mtengenezaji/Chapa
IXYS
Mfululizo
Linear L2™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-3P-3, SC-65-3
Kifurushi cha Kifaa cha Wasambazaji
TO-3P
Upotezaji wa Nguvu (Upeo)
540W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
30A (Tc)
Rds On (Max) @ Id, Vgs
240 mOhm @ 15A, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
335nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
10700pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 44844 PCS
Maelezo ya Mawasiliano
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