IXTT12N150
MOSFET N-CH 1500V 12A TO-268
Nambari ya Sehemu
IXTT12N150
Mtengenezaji/Chapa
Mfululizo
-
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Kifurushi cha Kifaa cha Wasambazaji
TO-268
Upotezaji wa Nguvu (Upeo)
890W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
1500V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
12A (Tc)
Rds On (Max) @ Id, Vgs
2 Ohm @ 6A, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
106nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
3720pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 39478 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTT12N150
IXTT12N150 Vipengele vya elektroniki
IXTT12N150 Mauzo
IXTT12N150 Msambazaji
IXTT12N150 Msambazaji
IXTT12N150 Jedwali la data
IXTT12N150 Picha
IXTT12N150 Bei
IXTT12N150 Toa
IXTT12N150 Bei ya chini
IXTT12N150 Tafuta
IXTT12N150 Ununuzi
IXTT12N150 Chip