IXTT140P10T
MOSFET P-CH 100V 140A TO-268
Nambari ya Sehemu
IXTT140P10T
Mtengenezaji/Chapa
Mfululizo
TrenchP™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Kifurushi cha Kifaa cha Wasambazaji
TO-268
Upotezaji wa Nguvu (Upeo)
568W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
140A (Tc)
Rds On (Max) @ Id, Vgs
12 mOhm @ 70A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
400nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
31400pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±15V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 51912 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTT140P10T
IXTT140P10T Vipengele vya elektroniki
IXTT140P10T Mauzo
IXTT140P10T Msambazaji
IXTT140P10T Msambazaji
IXTT140P10T Jedwali la data
IXTT140P10T Picha
IXTT140P10T Bei
IXTT140P10T Toa
IXTT140P10T Bei ya chini
IXTT140P10T Tafuta
IXTT140P10T Ununuzi
IXTT140P10T Chip