IXTT16P60P
MOSFET P-CH 600V 16A TO-268
Nambari ya Sehemu
IXTT16P60P
Mtengenezaji/Chapa
Mfululizo
PolarP™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Kifurushi cha Kifaa cha Wasambazaji
TO-268
Upotezaji wa Nguvu (Upeo)
460W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
16A (Tc)
Rds On (Max) @ Id, Vgs
720 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
92nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
5120pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 39393 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTT16P60P
IXTT16P60P Vipengele vya elektroniki
IXTT16P60P Mauzo
IXTT16P60P Msambazaji
IXTT16P60P Msambazaji
IXTT16P60P Jedwali la data
IXTT16P60P Picha
IXTT16P60P Bei
IXTT16P60P Toa
IXTT16P60P Bei ya chini
IXTT16P60P Tafuta
IXTT16P60P Ununuzi
IXTT16P60P Chip