IXTT20P50P
MOSFET P-CH 500V 20A TO-268
Nambari ya Sehemu
IXTT20P50P
Mtengenezaji/Chapa
Mfululizo
PolarP™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Kifurushi cha Kifaa cha Wasambazaji
TO-268
Upotezaji wa Nguvu (Upeo)
460W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
500V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
20A (Tc)
Rds On (Max) @ Id, Vgs
450 mOhm @ 10A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
103nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
5120pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 18001 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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IXTT20P50P Chip