IXTT82N25P
MOSFET N-CH 250V 82A TO-268
Nambari ya Sehemu
IXTT82N25P
Mtengenezaji/Chapa
Mfululizo
PolarHT™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Kifurushi cha Kifaa cha Wasambazaji
TO-268
Upotezaji wa Nguvu (Upeo)
500W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
250V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
82A (Tc)
Rds On (Max) @ Id, Vgs
35 mOhm @ 41A, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
142nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
4800pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 25639 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IXTT82N25P
IXTT82N25P Vipengele vya elektroniki
IXTT82N25P Mauzo
IXTT82N25P Msambazaji
IXTT82N25P Msambazaji
IXTT82N25P Jedwali la data
IXTT82N25P Picha
IXTT82N25P Bei
IXTT82N25P Toa
IXTT82N25P Bei ya chini
IXTT82N25P Tafuta
IXTT82N25P Ununuzi
IXTT82N25P Chip