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FQD3N60CTM-WS
Tazama Maelezo Zaidi DataSheets

FQD3N60CTM-WS

MOSFET N-CH 600V 2.4A DPAK
Nambari ya Sehemu
FQD3N60CTM-WS
Mtengenezaji/Chapa
ON Semiconductor
Mfululizo
QFET®
Hali ya Sehemu
Active
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Wasambazaji
D-Pak
Upotezaji wa Nguvu (Upeo)
50W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
2.4A (Tc)
Rds On (Max) @ Id, Vgs
3.4 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
14nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
565pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 48348 PCS
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